Kooban ee Molecular Beam Epitaxy (MBE)
Tignoolajiyada Molecular Beam Epitaxy (MBE) waxaa la sameeyay 1950-meeyadii si loogu diyaariyo agabka filim khafiif ah oo semiconductor ah iyadoo la adeegsanayo tignoolajiyada uumiga uumiga. Iyada oo la horumarinayo tignoolajiyada vacuum ultra-sare, adeegsiga tignoolajiyada ayaa la fidiyay goobta sayniska semiconductor.
Dhiirigelinta qalabka semiconductor ee cilmi-baarista ayaa ah baahida loo qabo aaladaha cusub, taas oo hagaajin karta waxqabadka nidaamka. Dhanka kale, tignoolajiyada cusubi waxay soo saari kartaa qalab cusub iyo tignoolajiyad cusub. Molecular beam epitaxy (MBE) waa tignoolajiyada faakuumka sare ee lakabka epitaxial (sida caadiga ah semiconductor) koritaanka. Waxay isticmaashaa alwaax kulaylka atamka isha ama molecules saameeya hal substrate crystal. Sifooyinka faakuumka aadka u sarreeya ee geeddi-socodku waxay oggolaadaan bir-samaynta goobta iyo korriinka walxaha dahaarka ee sagxadaha semiconductor ee dhawaan koray, taasoo keentay is-dhexyaal aan wasakhayn.
MBE Technology
Epitaxy beam-ka molecular waxaa lagu sameeyay faakuum sare ama faakuum ultra-sare ah (1 x 10-8Pa) deegaan. Qaybta ugu muhiimsan ee molecular beam epitaxy waa heerka hoos u dhigista, kaas oo inta badan u ogolaanaya filimka in epitaxial uu ku koraan wax ka yar 3000 nm saacaddii. Heerka dhigaalka hooseeya ee noocan oo kale ah wuxuu u baahan yahay faakuum ku filan oo sarreeya si loo gaaro isla heerka nadaafadda sida hababka kale ee dhigista.
Si loo daboolo faakuumka aadka u sarreeya ee kor lagu sharraxay, aaladda MBE (unugga Knudsen) waxa uu leeyahay lakab qaboojiye, iyo deegaanka faakuumka aadka u sarreeya ee qolka koritaanka waa in lagu hayaa iyada oo la adeegsanayo nidaamka wareegga wareegga nitrogen ee dareeraha ah. Nitrojiin dareeraha ah ayaa qaboojiya heerkulka gudaha qalabka ilaa 77 Kelvin (-196 °C). Deegaanka heerkulka hooseeya wuxuu sii yarayn karaa waxyaabaha wasakhda ah ee faakuumka wuxuuna bixiyaa shuruudo ka wanaagsan meelaynta filimada khafiifka ah. Sidaa darteed, nidaamka wareegga qaboojinta nitrogen dareere u go'an ayaa looga baahan yahay qalabka MBE si loo bixiyo sahay joogto ah oo joogto ah oo ah -196 °C nitrogen dareere ah.
Nidaamka Wareegga Qaboojinta Nitrogen ee dareeraha ah
Vakuum dareeraha nitrogen nidaamka wareegga wareegga inta badan waxaa ka mid ah,
● haanta cryogenic
● tuubada jaakadaysan ee weyn iyo laanta faakuumka tuubada jaakada leh
● MBE wejiga gaarka ah ee kala soocida iyo tuubada qiiqa ee jaakada leh ee faakuumka
● vacuum jaakadaha kala duwan
● xannibaad dareere gaas ah
Filterka jaakad faaruq ah
● nidaamka bamka vacuum ee firfircoon
● Qaboojinta iyo nadiifinta nidaamka dib u kululaynta
Shirkadda HL Cryogenic Equipment Company waxay ogaatay baahida MBE ee nidaamka qaboojinta dareeraha nitrogen, laf-dhabar farsamo oo habaysan si ay si guul leh u horumariso nidaamka qaboojinta nitrogen ee dareeraha ah ee MBE ee tignoolajiyada MBE iyo xirmo dhammaystiran oo ah insulat vacuumednidaamka tuubooyinka, kaas oo laga isticmaali jiray shirkado badan, jaamacado iyo machadyo cilmi baaris.
Qalabka Cryogenic HL
Qalabka Cryogenic HL oo la aasaasay 1992 waa sumad ku xidhan Chengdu Holy Cryogenic Equipment Company ee Shiinaha. Qalabka Cryogenic ee HL waxaa ka go'an naqshadeynta iyo soo saarista Nidaamka Tuubbooyinka Daahsoon ee Xakamaynta Sare iyo Qalabka Taageerada ee la xiriira.
Wixii macluumaad dheeraad ah, fadlan booqo website-ka rasmiga ahwww.hlcryo.com, ama iimayl ku dirinfo@cdholy.com.
Waqtiga boostada: May-06-2021
